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STMicroelectronics (ST) Leading 900V MOSFET Transistors
Improve the output power and energy efficiency of the flyback converter
China, March 23, 2017 - ST's new 900VMDmeshTM K5 super-junction MOSFET allows power supply designers to meet higher power and more energy efficient system requirements with the best on-resistance (RDS) in their class (ON)) and dynamic characteristics.
The 900V breakdown voltage ensures a high safety factor for high bus voltage systems. The new series includes the first 900V MOSFET with RDS(ON) on-resistance less than 100m?, which is the lowest DPAK product with the lowest RDS(ON) resistance. The industry's lowest gate charge (Qg) ensures faster switching speeds and greater configuration flexibility in applications that require a wide input voltage. These features ensure that various flyback converters, such as standard quasi-resonant circuits and active clamp designs, are energy efficient and reliable, covering power ratings down to 35W up to 230W. In addition, low input and output capacitors (Ciss, Coss) enable zero voltage switching, minimizing power loss in half-bridge LLC resonant converters.
The new device's high safety factor and excellent dynamics allow designers to improve the performance of a variety of products, such as server power, three-phase switching power supply (SMPS), LED lighting power, electric vehicle (EV) chargers, solar panels, Welding machines, industrial equipment drive systems and factory automation.
STMicroelectronics' MDmesh K5 series of superjunction transistors are available in a wide range of products including 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V rated voltages. Coupled with flexible package options, including TO-220AB, TO-220FP, TO-247, TO-247 long pins, IPAK and I2PAK, as well as D2PAK and DPAK surface power packages, STMicroelectronics offers designers a rich set of super Junction ultra high voltage (VHV) MOSFET products.
The latest 900V MDmeshTM K5 MOSFET is available today in the DPAK package STD4N90K5.
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